DESCRIPTION
The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery.
The memory cells used in the MB85RC16 have at least 1010 Read/Write operation endurance per bit, which is a significant improvement over the number of read and write operations supported by other nonvolatile memory products.
The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike Flash memory and E2PROM. Therefore, the writing completion waiting sequence like a write busy state is not required.

FEATURES
• Bit configuration : 2,048 words × 8 bits
• Operating power supply voltage : 2.7 V to 3.6 V
• Operating frequency : 1 MHz (Max)
• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating temperature range : − 40 °C to + 85 °C
• Data retention : 10 years ( + 75 °C)
• Read/Write endurance : 1010 times
• Package : Plastic / SOP, 8-pin (FPT-8P-M02)
• Low power consumption : Operating current 0.1mA (Max: @1 MHz), Standby current 0.1 μA (Typ)