DESCRIPTION
MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS256 adopts the Serial Peripheral Interface (SPI).
Unlike SRAM, MB85RS256 is able to retain data without back-up battery.
The memory cells used for the MB85RS256 has improved at least 1010 times of read/write operation significantly outperforming Flash memory and E2PROM in the number.
MB85RS256 does not take long time to write data unlike Flash memories nor E2PROM, and MB85RS256 takes no wait time.

FEATURES
• Bit configuration : 32,768 × 8 bits
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating frequency : 15 MHz (Max)
• Serial Peripheral Interface : SPI (Serial Peripheral Interface)
                                               Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Operating temperature range : −20 °C to +85 °C
• Data retention : 10 years (+55 °C)
• High endurance 10 Billion Read/writes (Min)
• Package : 8-pin plastic SOP (FPT-8P-M02)