■ DESCRIPTION
The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store ECC code(Specifications indecated are on condition that ECC system would be combined.). Program and read data is transferred between the memory array and page register in 528 byte increments. A 528 byte page can be programmed in 200 µs and an 8K byte block can be erased in 2 ms under typical conditions.
■ FEATURES
• 3.3 V-only operating voltage (2.7 V to 3.6 V)
Minimizes system level power requirements
• Organization
Memory Cell Array : (8M + 256K) ×8 bit
Data Register : (512 + 16) ×8 bit
• Automatic Program and Erase
Page Program : (512 + 16) Byte
Block Erase : (8K + 256) Byte
• 528 Byte Page Read Operation
Random Access : 7 µs (Max.)
Serial Access : 35 ns (Max.)
• Fast Program and Erase
Program Time : 200 µs (Typ.) / page
Block Erase Time : 2 ms (Typ.) / block
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• 1,000,000 write/erase cycle guaranteed (ECC system required)
• Command Register Operation
• Package
44(40)-pin TSOP Type II (0.8 mm pitch)
Normal/Reverse Type
• Data Retention: 10 years