Fabricante
![NJSEMI](/logo/NJSEMI.png)
New Jersey Semiconductor
![NJSEMI](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
AXIAL LEAD RECTIFIERS
. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial consr"jction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
• Extremely Low VF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
Número de pieza
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DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD