Fabricante
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ON Semiconductor
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Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.
• Extremely Low VF
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Low Stored Charge, Majority Carrier Conduction
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Fabricante
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20-40 VOLTS
Weitron Technology
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20-40 VOLTS
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 60 VOLTS
ON Semiconductor
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS ( Rev : 2006 )
ON Semiconductor
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
Motorola => Freescale
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
ON Semiconductor
SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 40 VOLTS
Motorola => Freescale
SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20, 40 VOLTS
ON Semiconductor
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 100 VOLTS
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS
Motorola => Freescale