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MBRA120ET3G(2014) Hoja de datos - ON Semiconductor

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MBRA120ET3G

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4 Pages

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Fabricante
ONSEMI
ON Semiconductor ONSEMI

Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package

Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.


FEATUREs
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
• Optimized for Low Leakage Current
• NRVBA Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant


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