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MBRD5H100T4G(2012) Hoja de datos - ON Semiconductor

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MBRD5H100T4G

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ONSEMI
ON Semiconductor ONSEMI

SWITCHMODE Schottky Power Rectifier
Surface Mount Power Package

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.


FEATUREs
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Short Heat Sink Tab Manufactured − Not Sheared!
• NBRD Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• All Packages are Pb−Free*

Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 0.4 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
   260°C Max. for 10 Seconds
• Device Meets MSL1 Requirements
• ESD Ratings:
   ♦ Machine Model = C (> 400 V)
   ♦ Human Body Model = 3B (> 8000 V)


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