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MBRD835L(2005) Hoja de datos - ON Semiconductor

MBRD835L image

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MBRD835L

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6 Pages

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117.9 kB

Fabricante
ON-Semiconductor
ON Semiconductor ON-Semiconductor

This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits.


FEATUREs
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Compact Size
• Lead Formed for Surface Mount
• Pb−Free Packages are Available

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