. . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

• Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C)
• Small Compact Surface Mountable Package with J–Bend Leads
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection