General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.

FEATUREs
□ VDS = 600V
□ VDS = 660V @ Tjmax
□ ID = 10A @ VGS = 10V
□ RDS(ON) ≤ 0.7Ω @ VGS = 10V

APPLICATIONs
□ Power Supply
□ PFC
□ High Current, High Speed Switching