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MG100J1ZS40 Hoja de datos - Toshiba

MG100J1ZS40 image

Número de pieza
MG100J1ZS40

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6 Pages

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Toshiba
Toshiba Toshiba

High Power Switching Applications
Motor Control Applications

● High input impedance
● High spee : tf = 0.35µs (max)
                       trr = 0.15µs (max)
● Low saturation voltage : VCE (sat) = 3.5V (max)
● Enhancement-mode
● The electrodes are isolated from case.

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Fabricante
TOSHIBA GTR Module Silicon N Channel IGBT ( Rev : 1997 )
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TOSHIBA GTR Module Silicon N Channel IGBT
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Toshiba
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
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TOSHIBA GTR Module Silicon N Channel IGBT
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Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
Ver
Toshiba
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
Ver
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Ver
Toshiba

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