MG50G2DM1 Hoja de datos - Toshiba
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MG50G2DM1
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Toshiba
HIGH POWER SWITCHING APPLICATIIONS.
MOTOR CONTROL APPLICATIONS.
FEATURES:
• The Drain is Isolated from Case.
• 2 MOS FETs are Built-in to 1 Package
• with Built-in Free ON Resistance
: RDS(ON) = 0.14 Ω (Max.) (ID = 50A)
• Enhancement-Mode.
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