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MGFS45V2735(2011) Hoja de datos - MITSUBISHI ELECTRIC

MGFS45V2735 image

Número de pieza
MGFS45V2735

Other PDF
  1999   lastest PDF  

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page
3 Pages

File Size
119.1 kB

Fabricante
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
Class A operation
Internally matched to 50(ohm) system
• High output power
   P1dB=30W (TYP.) @f=2.7 - 3.5GHz
• High power gain
   GLP=12.0dB (TYP.) @f=2.7 - 3.5GHz
• High power added efficiency
   P.A.E.=36% (TYP.) @f=2.7 - 3.5GHz
• Low distortion [item -51]
   IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L


APPLICATION
• item 01 : 2.7 - 3.5 GHz band power amplifier
• item 51 : 2.7 - 3.5 GHz band digital radio communication

Page Link's: 1  2  3 

Número de pieza
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C band internally matched power GaAs FET ( Rev : 2011 )
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C band internally matched power GaAs FET
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MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
Ver
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
Ver
MITSUBISHI ELECTRIC

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