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MGY20N120D

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ON Semiconductor ON-Semiconductor

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.

• Industry Standard High Power TO–264 Package (TO–3PBL)
• High Speed Eoff: 160 J per Amp typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA


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Fabricante
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Ver
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Ver
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Ver
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Ver
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Ver
ON Semiconductor
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Ver
ON Semiconductor
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Ver
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Ver
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Ver
ON Semiconductor
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Ver
Motorola => Freescale

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