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MH16V645BWJ Hoja de datos - MITSUBISHI ELECTRIC

MH16V645BWJ image

Número de pieza
MH16V645BWJ

Other PDF
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page
22 Pages

File Size
122.9 kB

Fabricante
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MH16V645BWJ is 16777216-word x 64-bit dynamic ram module. This consist of sixteen industry standard 16M x 4 dynamic RAMs in SOJ and one industry standard EEPROM in TSSOP.
The mounting of SOJs and TSSOP on a card edge dual in-line package provides any application where high densities and large of quantities memory are required.
This is a socket-type memory module ,suitable for easy interchange or addition of module.


FEATURES
• Utilizes industry standard 16M x 4 RAMs in SOJ and industry
• standard EEPROM in TSSOP
• 168-pin (84-pin dual dual in-line package)
• Single +3.3V(±0.3V) supply operation
• Low stand-by power dissipation
    28.8mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level
• Low operation power dissipation
    MH16V645BWJ -5 . . . . . . . . . . . . . . . . . . 5.76W(Max)
    MH16V645BWJ -6 . . . . . . . . . . . . . . . . . . 5.19W(Max)
• All input are directly LVTTL compatible
• All output are three-state and directly LVTTL compatible
• Includes(0.22uF x 16) decoupling capacitors
• 4096 refresh cycle every 64ms
• Hyper-page mode,Read-modify-write, /CAS before /RAS refresh,Hidden refresh capabilities
• Gold plating contact pads


APPLICATION
   Main memory unit for computers , Microcomputer memory

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