The RF Line
PCS BAND RF LINEAR LDMOS AMPLIFIER

Designed for ultrañlinear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA.

• Third Order Intercept: 49.5 dBm Typ
• Power Gain: 29 dB Typ (@ f = 1960 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications

1900 - 2000 MHz 12 W, 29 dB RF LINEAR LDMOS AMPLIFIER