Description
The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.

FEATUREs
• Ultra-compact
• PWB mounting type package
• High sensing accuracy ( Slit width: 0.3mm )
• Gap between light emitter and detector: 1.2mm

APPLICATIONs
• Cameras
• Floppy disk drives
• Printer