High-Current Complementary Silicon Transistor

. . . for use as output devices in complementary general purpose amplifier applications.

• High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc
                                           hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor
• Junction Temperature to +200°C