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MJ11029 Hoja de datos - Inchange Semiconductor

MJ11029 image

Número de pieza
MJ11029

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2 Pages

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Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage
    : V(BR)CEO= -60V(Min.)
• High DC Current Gain-
    : hFE= 1000(Min.)@IC= -25A
    : hFE= 400(Min.)@IC= -50A
• Complement to Type MJ11028


APPLICATIONS
• Designed for use as output devices in complementary general purpose amplifier applications.

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