High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

FEATUREs
• High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc
                                         hFE = 400 (Min)@ Ic = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated Ic
• Monolithic Construction with Built-in Base-Emitter Shunt Resistor
• Junction Temperature to + 200 °C