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MJ11032 Hoja de datos - Inchange Semiconductor

MJ11032 image

Número de pieza
MJ11032

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2 Pages

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Fabricante
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage
   : V(BR)CEO= 120V(Min.)
• High DC Current Gain-
   : hFE= 1000(Min.)@IC= 25A
   : hFE= 400(Min.)@IC= 50A
• Complement to Type MJ11033


APPLICATIONS
• Designed for use as output devices in complementary
   general purpose amplifier applications.

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Número de pieza
componentes Descripción
PDF
Fabricante
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Unspecified
Silicon NPN Darlington Power Transistor
Ver
Shenzhen SPTECH Microelectronics Co., Ltd.

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