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MJE13009G(2011) Hoja de datos - ON Semiconductor

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MJE13009G

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ON Semiconductor ON-Semiconductor

Switch-mode Series NPN Silicon Power Transistors

The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switch-mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.


FEATUREs
• VCEO(sus) 400 V and 300 V
• Reverse Bias SOA with Inductive Loads @ TC = 100°C
• Inductive Switching Matrix 3 to 12 Amp, 25 and 100°C tc @ 8 A,
   100°C is 120 ns (Typ)
• 700 V Blocking Capability
• SOA and Switching Applications Information
• These Devices are Pb−Free and are RoHS Compliant*


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