MJE271G_06 Hoja de datos - ON Semiconductor
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MJE271G_06
componentes Descripción
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ON Semiconductor
Complementary Silicon Power Transistors
FEATUREs
• High Safe Operating Area
IS/B @ 40 V, 1.0 s = 0.375 A
• Collector−Emitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min)
• High DC Current Gain
hFE @ 120 mA, 10 V = 1500 (Min)
• Pb−Free Packages are Available*
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2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS
Motorola => Freescale
2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS
ON Semiconductor
2.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS 50 WATTS
Boca Semiconductor
2.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS 50 WATTS
New Jersey Semiconductor
2.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS 50 WATTS
Mospec Semiconductor
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS
ON Semiconductor
DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 Volts 160 Watts
Boca Semiconductor
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 125 WATTS
Mospec Semiconductor
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