MJE803 Hoja de datos - New Jersey Semiconductor
Número de pieza
MJE803
componentes Descripción
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2 Pages
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74.8 kB
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New Jersey Semiconductor
... designed for general-purpose amplifier and low-speed switching applications.
• High DCCurrent Gain —
hFE = 2000 (Typ) @ IC = 2.0 Adc
• Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage
Multiplication
• Choice of Packages —
MJE700 and MJE800 series
T0220AB, MJE700T and MJE800T
Número de pieza
componentes Descripción
PDF
Fabricante
Plastic Darlington Complementary Silicon Power Transistors ( Rev : 2002 )
ON Semiconductor
Plastic Darlington Complementary Silicon Power Transistors ( Rev : 2002 )
ON Semiconductor
Plastic Darlington Complementary Silicon Power Transistors ( Rev : 2006 )
ON Semiconductor
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