datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  ON Semiconductor  >>> MMBD352WT1G PDF

MMBD352WT1G Hoja de datos - ON Semiconductor

MMBD352WT1G image

Número de pieza
MMBD352WT1G

componentes Descripción

Other PDF
  2005  

PDF
DOWNLOAD     

page
3 Pages

File Size
106.9 kB

Fabricante
ON-Semiconductor
ON Semiconductor ON-Semiconductor

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.


FEATUREs
• Very Low Capacitance − Less Than 1.0 pF @ 0 V
• Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
• AEC Qualified and PPAP Capable
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*

 

Page Link's: 1  2  3 

Número de pieza
componentes Descripción
PDF
Fabricante
SCHOTTKY BARRIER DUAL DIODE
Ver
Advanced Semiconductor
Dual Schottky Barrier Diode
Ver
Motorola => Freescale
SCHOTTKY BARRIER DUAL DIODE
Ver
Advanced Semiconductor
Dual Schottky Barrier Diode
Ver
Leshan Radio Company
Dual Schottky barrier diode
Ver
NXP Semiconductors.
Dual Schottky barrier diode
Ver
NXP Semiconductors.
Dual Schottky Barrier Diode
Ver
ON Semiconductor
SCHOTTKY BARRIER DUAL DIODE
Ver
Advanced Semiconductor
SCHOTTKY BARRIER DUAL DIODE
Ver
Advanced Semiconductor
Dual Schottky Barrier Diode
Ver
Leshan Radio Company,Ltd

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]