MMBTA13L-AE3-R Hoja de datos - Unisonic Technologies
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MMBTA13L-AE3-R
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Unisonic Technologies
NPN EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
The UTC MMBTA13 is a Darlington transistor.
FEATURES
* Collector-Emitter Voltage: VCES = 30V
* Collector Dissipation: PC(MAS) = 350 mW
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