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MMG3003NT1 image

Número de pieza
MMG3003NT1

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17 Pages

File Size
577.8 kB

Fabricante
NXP
NXP Semiconductors. NXP

Heterojunction Bipolar Transistor Technology (InGaP HBT)
Broadband High Linearity Amplifier

The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.


FEATUREs
• Frequency: 40-3600 MHz
• P1dB: 24 dBm @ 900 MHz
• Small-Signal Gain: 20 dB @ 900 MHz
• Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
• Single Voltage Supply
• Internally Matched to 50 Ohms
• Cost-effective SOT-89 Surface Mount Plastic Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

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Número de pieza
componentes Descripción
PDF
Fabricante
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2008 )
Ver
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2011 )
Ver
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2017 )
Ver
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
Motorola => Freescale
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2006 )
Ver
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
NXP Semiconductors.

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