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MMG3005NT1(2005) Hoja de datos - Freescale Semiconductor

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MMG3005NT1

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20 Pages

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Freescale
Freescale Semiconductor Freescale

Heterojunction Bipolar Transistor Technology (InGaP HBT)
Broadband High Linearity Amplifier

The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 800 to 2200 MHz such as Cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small-signal RF.


FEATUREs
• Frequency: 800-2200 MHz
• P1dB: 30 dBm @ 2140 MHz
• Small-Signal Gain: 15 dB @ 2140 MHz
• Third Order Output Intercept Point: 47 dBm @ 2140 MHz
• Single 5 Volt Supply
• Internally Prematched to 50 Ohms
• Pb-Free Leads. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

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Número de pieza
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PDF
Fabricante
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2008 )
Ver
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2011 )
Ver
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2017 )
Ver
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Ver
Motorola => Freescale
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2006 )
Ver
Freescale Semiconductor

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