INTRODUCTION
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by lowvoltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.

FEATURES
• +3.3 Volt power supply
• Fast 35 ns read/write cycle
• SRAM compatible timing
• Unlimited read & write endurance
• Data always non-volatile for >20-years at temperature
• RoHS-compliant small footprint BGA and TSOP2 packages
• All products meet MSL-3 moisture sensitivity level

BenefitS
• One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems
   for simpler, more efficient designs
• Improves reliability by replacing battery-backed SRAM