The RF Line
Microwave Long Pulse Power Transistor

Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters.

• Guaranteed Performance @ 1.215 GHz, 36 Vdc
   Output Power = 120 Watts Peak
   Gain = 8.0 dB Min., 9.2 dB (Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR
• Hermetically Sealed Industry Standard Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Internal Input and Output Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.