2170 MHz, 170 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
    Output Power — 38 Watts (Avg.)
    Power Gain — 12.1 dB
    Efficiency — 22%
    IM3 — 37.5 dBc
    ACPR — -41 dBc
• Internally Input and Output Matched, for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.