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MRF581 Hoja de datos - Microsemi Corporation

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Número de pieza

MRF581

componentes Descripción

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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1999

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page

6 Pages

File Size

137.4 kB

Fabricante

Microsemi Corporation

Microsemi

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

FEATUREs
• Low Noise - 2.5 dB @ 500 MHZ
• Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package

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componentes Descripción

PDF

Fabricante

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

New Jersey Semiconductor

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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