The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/ce l lu lar rad io and WLL applications.

• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts,
   IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
   3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz
   and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
   @ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
   on CCDF.
      Output Power — 33 Watts Avg.
      Power Gain — 12.5 dB
      Efficiency — 25%
      IM3 — –37 dBc
      ACPR — –39 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.