MRF6S18140HSR3(2006) Hoja de datos - Freescale Semiconductor
Número de pieza
MRF6S18140HSR3
componentes Descripción
Other PDF
PDF
page
12 Pages
File Size
400.3 kB
Fabricante
Freescale Semiconductor
Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
FEATUREs
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Número de pieza
componentes Descripción
PDF
Fabricante
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ( Rev : 2007 )
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Motorola => Freescale
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Tyco Electronics
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ( Rev : 2006 )
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
Share Link: