DESCRIPTION:
Designed primarily for use in High Gain, low noise general-purpose amplifiers.

FEATUREs
• Silicon NPN, high Frequency, To-72 packaged, Transistor
• High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz
                                                   7 dB (typ) @ f = 1 GHz
• Low Noise Figure
   NF = 1.5 dB (typ) @ f = 450 MHz
• High FT - 4 GHz (typ) @ IC = 15 mAdc