DESCRIPTION:
Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications.

FEATUREs
• Silicon NPN, High Frequency Transistor
• High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz
• Low Noise Figure: NF = 2.5 dB (typ) @ f = 500 MHz
• High FT - 4.5 GHz (typ) @ IC = 20 mAdc