RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 28 volt base station equipment.

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
   1000 mA, Pout = 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
   64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
   PAR = 7.5 dB @ 0.01% Probability on CCDF.
      Power Gain — 21 dB
      Drain Efficiency — 32.3%
      Device Output Signal PAR — 6.4 dB @ 0.01% Probability on CCDF
      ACPR @ 5 MHz Offset — -39.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 180 W CW
   (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

FEATUREs
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.