The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.

• Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 12 Volts,
   IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
   @ 0.01% Probability)
      Output Power — 300 mWatt
      Power Gain — 11.5 dB
      Efficiency — 25%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.