Features
• Platinum/Tungsten schottky barrier for low forward voltage drop
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• TXV-level (MSASC150H45AV) or S-level (MSASC150H45AS) screening i.a.w. Microsemi Internal Procedure PS 11.50 available