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MSD02120V1 Hoja de datos - Shenzhen Meipusen Semiconductor Co., Ltd

MSD02120V1 image

Número de pieza
MSD02120V1

componentes Descripción

Other PDF
  no available.

PDF
DOWNLOAD     

page
4 Pages

File Size
387.2 kB

Fabricante
MAPLESMI
Shenzhen Meipusen Semiconductor Co., Ltd MAPLESMI

Features
- 1200-Volt Schottky Rectifier
- Shorter recovery time
- High-speed switching possible
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive Temperature Coefficient on VF


Benefits
- Higher safety margin against overvoltage
- Improved efficiency all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduction of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway
- Essentialy No Switching Losses


APPLICATIONs
- Switch Mode Power Supplies
- Power Factor Correction
- Motor Drives
- HID Lighting


Número de pieza
componentes Descripción
PDF
Fabricante
1200V Silicon Carbide Diode
Ver
Shenzhen Meipusen Semiconductor Co., Ltd
1200V Silicon Carbide Diode
Ver
Shenzhen Meipusen Semiconductor Co., Ltd
1200V Silicon Carbide Diode
Ver
Shenzhen Meipusen Semiconductor Co., Ltd
1200V Silicon Carbide Diode
Ver
Shenzhen Meipusen Semiconductor Co., Ltd
1200V Silicon Carbide Diode
Ver
Shenzhen Meipusen Semiconductor Co., Ltd
1200V Silicon Carbide Diode
Ver
Shenzhen Meipusen Semiconductor Co., Ltd
1200V Silicon Carbide Diode
Ver
Shenzhen Meipusen Semiconductor Co., Ltd
1200V Silicon Carbide Diode
Ver
Shenzhen Meipusen Semiconductor Co., Ltd
1200V Silicon Carbide Schottky Diode - 1
Ver
Solitron Devices Inc.
1200V Silicon Carbide Schottky Diode - 1
Ver
Solitron Devices Inc.

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