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MT28F320A18FF-70TET Hoja de datos - Micron Technology

MT28F320A18FF-70B image

Número de pieza
MT28F320A18FF-70TET

componentes Descripción

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37 Pages

File Size
345.6 kB

Fabricante
Micron
Micron Technology Micron

GENERAL DESCRIPTION
The MT28F320A18 is a nonvolatile electrically block-erasable (Flash) memory containing eight 4-Kword parameter blocks and sixty-three 32K-word main blocks.


FEATURES
• 32Mb block architecture
    Seventy-one erasable blocks:
    Eight 4K-word parameter blocks
    Sixty-three 32K-word main memory blocks
• VCC, VCCQ, VPP voltages*
    1.65V (MIN), 1.95V (MAX) VCC, VCCQ
    0.9V (MIN), 1.95V (MAX) VPP (in-system
    PROGRAM/ERASE)
    12V ±5% (HV) VPP tolerant (factory programming
    compatibility)
• Random access time: 70ns @ 1.65V VCC
• Low power consumption (VCC = 1.8V)
    Asynchronous Read < 18mA
    Write/Erase < 40mA (MAX)
    Standby < 50µA (MAX)
    Automatic power saving feature (APS)
• Enhanced write and erase suspend options
    ERASE-SUSPEND-to-READ
    PROGRAM-SUSPEND-to-READ
    ERASE-SUSPEND-to-PROGRAM
• Dual 64-bit chip protection registers for security purposes
• Cross-compatible command support
    Extended command set
    Common flash interface
• PROGRAM/ERASE cycle
    100,000 WRITE/ERASE cycles per block (VPP = VPP1)

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Número de pieza
componentes Descripción
PDF
Fabricante
FLASH MEMORY
Ver
Samsung
FLASH MEMORY
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FLASH MEMORY
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FLASH MEMORY
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Micron Technology
FLASH MEMORY
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Samsung
FLASH MEMORY
Ver
Samsung
FLASH MEMORY
Ver
Micron Technology
FLASH MEMORY
Ver
Micron Technology
FLASH MEMORY
Ver
Samsung
FLASH MEMORY
Ver
Samsung

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