datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  ON Semiconductor  >>> MURH860CT PDF

MURH860CT Hoja de datos - ON Semiconductor

MURH860CTG image

Número de pieza
MURH860CT

componentes Descripción

Other PDF
  2008  

PDF
DOWNLOAD     

page
4 Pages

File Size
46.5 kB

Fabricante
ON-Semiconductor
ON Semiconductor ON-Semiconductor

MEGAHERTZ Power Rectifier

These state-of-the-art are MEGAHERTZ power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes.


FEATUREs
• Ultrafast 35 Nanosecond Recovery Times
• 175°C Operating Junction Temperature
• Popular TO-220 Package
• Epoxy Meets UL 94 V−0 @ 0.125 in
• High Temperature Glass Passivated Junction
• High Voltage Capability to 600 V
• Low Leakage Specified @ 150°C Case Temperature
• Current Derating @ Both Case and Ambient Temperatures
• Pb−Free Package is Available*

Page Link's: 1  2  3  4 

Número de pieza
componentes Descripción
PDF
Fabricante
MEGAHERTZ Power Rectifier ( Rev : 2006 )
Ver
ON Semiconductor
MEGAHERTZ Power Rectifier
Ver
ON Semiconductor
Power MOSFETs F-Class: MegaHertz Switching
Ver
IXYS CORPORATION
HiPerRF Power MOSFETs F-Class: MegaHertz Switching ( Rev : 2002 )
Ver
IXYS CORPORATION
HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching
Ver
IXYS CORPORATION
HiPerRF Power MOSFETs F-Class: MegaHertz Switching
Ver
IXYS CORPORATION
HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching
Ver
IXYS CORPORATION
HiPerRF Power MOSFETs F-Class: MegaHertz Switching
Ver
IXYS CORPORATION
HiPerRF™ Power MOSFETs F-Class: MegaHertz Switching
Ver
IXYS CORPORATION
HiPerRF™ Power MOSFETs F-Class: MegaHertz Switching ( Rev : 2003 )
Ver
IXYS CORPORATION

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]