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MX29F1610 Hoja de datos - Macronix International

29F1610 image

Número de pieza
MX29F1610

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37 Pages

File Size
357.4 kB

Fabricante
MCNIX
Macronix International MCNIX

GENERAL DESCRIPTION
The MX29F1610 is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610
includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXIC's Flash memories offer the most cost
effective and reliable read/write non-volatile random access memory.


FEATURES
• 5V ±10% write and erase
• JEDEC-standard EEPROM commands
• Endurance:10,000 cycles
• Fast access time: 100/120ns
• Sector erase architecture
- 16 equal sectors of 128k bytes each
- Sector erase time: 150ms typical
• Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the whole chip with Erase Suspend capability
- Automatically programs and verifies data at specified addresses
• Status Register feature for detection of program or erase cycle completion
• Low VCC write inhibit is equal to or less than 3.2V
• Software and hardware data protection
• Page program operation
- Internal address and data latches for 128 bytes/64 words per page
- Page programming time: 3ms typical
- Byte programming time: 24us in average
• Low power dissipation
- 50mA active current
- 100uA standby current
• CMOS and TTL compatible inputs and outputs
• Two independently Protected sectors
• Deep Power-Down Input
- 1uA ICC typical
• Industry standard surface mount packaging
- 48 lead TSOP, TYPE I
- 44 lead SOP

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