FEATURES
GENERAL FEATURES
• 2.7 to 3.6 volt for read, erase, and program operations
• Byte/Word mode switchable
   - 67,108,864 x 8 / 33,554,432 x 16
• 64KW/128KB uniform sector architecture
   - 512 equal sectors
• 16-byte/8-word page read buffer
• 64-byte/32-word write buffer
• Extra 128-word sector for security
   - Features factory locked and identifiable, and customer lockable
• Advanced sector protection function (Solid and Password Protect)
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash

PERFORMANCE
• High Performance
   - Fast access time:
      - MX29GL512F H/L: 100ns (VCC=3.0~3.6V), 110ns (VCC=2.7~3.6V)
      - MX29GL512F U/D: 110ns/120ns (VCC=2.7~3.6V, V I/O=1.65 to Vcc)
   - Page access time:
      - MX29GL512F H/L: 25ns
      - MX29GL512F U/D: 30ns
   - Fast program time: 10us/word
   - Fast erase time: 0.5s/sector
• Low Power Consumption
   - Low active read current: 10mA (typical) at 5MHz
   - Low standby current: 40uA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention

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