Description
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATUREs
• Low on-state resistance
   RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low input capacitance
   Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current
   ID(DC) = ±100 A
• RoHS Compliant