General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

FEATUREs
• Fast switching
• rDS(ON) = 0.0019Ω (Typ), VGS = 10V
• rDS(ON) = 0.0027Ω (Typ), VGS = 4.5V
• Qg (Typ) = 110nC, VGS = 5V
• Qgd (Typ) = 31nC
• CISS (Typ) = 11000pF

APPLICATIONs
• DC/DC converters