DESCRIPTION
The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability.

FEATURES
High Linear Power and Gain
Low Internal Modulation Distortion
High Reliability Gold Metalization
Emitter Ballasting
24 V Operation

APPLICATION
Digital Cellular : PCN/PCS etc.
Digital Cordless: PHS etc.