Product Description
Stanford Microdevices’ NGA-286 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 6 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products.

Product Features
• High Gain: 14.8dB at 1950Mhz
• Cascadable 50 ohm: 1.3:1 VSWR
• Patented GaAs HBT Technology
• Operates from Single Supply
• Low Thermal Resistance Package
• Unconditionally Stable

APPLICATIONs
• Cellular, PCS, CDPD
• Wireless Data, SONET