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NGB8206ANTF4G Hoja de datos - ON Semiconductor

NGB8206AN image

Número de pieza
NGB8206ANTF4G

componentes Descripción

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9 Pages

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111.6 kB

Fabricante
ON-Semiconductor
ON Semiconductor ON-Semiconductor

Ignition IGBT
20 A, 350 V, N−Channel D2PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.


FEATUREs
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• These are Pb−Free Devices


APPLICATIONs
• Ignition Systems

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