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NJD2873T4G(2012) Hoja de datos - ON Semiconductor

NJD2873T4G image

Número de pieza
NJD2873T4G

componentes Descripción

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page
5 Pages

File Size
97.7 kB

Fabricante
ONSEMI
ON Semiconductor ONSEMI

Power Transistors
NPN Silicon DPAK For Surface Mount Applications

Designed for high−gain audio amplifier applications.


FEATUREs
• High DC Current Gain −
   hFE = 120 (Min) @ IC = 500 mA
           = 40 (Min) @ IC = 2 A
• Low Collector−Emitter Saturation Voltage −
   VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A
• High Current−Gain − Bandwidth Product −
   fT = 65 MHz (Min) @ IC = 100 mA
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings:
   ♦ Human Body Model, 3B > 8000 V
   ♦ Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• These are Pb−Free Packages


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